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Extra info for Advanced High Speed Devices
Treating it as such, from Song we consider for small currents, electrons that are directed toward the right drain induce the following: V RL = − 3πh 2 3 4e N SCD E F N RD I SR 2 . 9 If we sum VRL and VLR we get a net potential between the two drains. With both gates at an equal voltage, VRL and VLR are equal, however as the gates change the current in each channel, a potential difference increases non-linearly. The non-linear change in potential is due to electrons being deflected away from the center drain port by the artificial scattering mechanism.
Phys. vol. 76, pp. 4879-4890 International Journal of High Speed Electronics and Systems Vol. 19, No. edu The Ballistic Deflection Transistor (BDT) is a novel device that is based upon an electron steering and a ballistic deflection effect. Composed of an InGaAs-InAlAs heterostructure on an InP substrate, this material system provides a large mean free path and high mobility to support ballistic transport at room temperature. The planar nature of the device enables a two step lithography process, as well, implies a very low capacitance design.
Based on the above mentioned 2D-plasmonic nanostructure, we numerically analyze the dispersive effect on the transmission spectrum for coherent terahertz electromagnetic (EM) waves, and demonstrate functionalities of terahertz frequency multipliers as well as intensity modulators. Emission and Intensity Modulation of Terahertz Electromagnetic Radiation 49 Fig. 15. Double-grating plasmonic nanostructure configuring intensity modulator. Physical phenomena of 2D plasmons are described by the hydrodynamic equations.